Abstract
The effect of rapid thermal annealing (RTA) on the formation of shallow p + n junctions by the implantation of boron ( 11B +) and boron difluoride (BF 2 +) ions into SiO 2 Cz-(100) Si systems have been studied. The junction formation by various implant conditions have been investigated to correlate with initial dopant drive-in efficiency, defects in junctions, and junction depth under different anneal experimental conditions. Boron and fluorine concentrations versus depth profiles before and after annealing have been measured using secondary ion mass spectrometry (SIMS). Results indicate that boron diffusion in the BF 2 + case is widely reduced during rapid thermal treatments. Discussions of this are based on the effect of both knocked-on oxygen and fluorine on the boron diffusion kinetics.
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