Abstract
In an effort to optimize the semiconducting properties of heteroepitaxial silicon films less than 1 μm in thickness a procedure has been employed in which the substrate surface is covered at a rate in excess of 5 μm/min, and the remainder of the deposit is grown at a rate of 0.3 μm/min. The rapid surface coverage influences the crystallographic and electrical properties of the silicon within 0.9 μm of the sapphire substrate. Correlations are observed between X-ray diffraction profile half-widths, reflection electron (high-energy) diffraction, device mobilities and life time. The distance from the substrate over which aluminum contamination decreases to a constant bulk value, as measured by secondary ion mass spectrometry, is in good agreement with the thickness at which complete surface coverage is realized.
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