Abstract

The paper presents results of studying temperature dependences of the specific volume resistance of nonirradiated and irradiated [Formula: see text]-rays with a different dose of [Formula: see text] vol.%TlInSe2 composites in the temperature range 300–380 K. The technique for modifying the structure of composites with semiconductor filler was carried out on a [Formula: see text]Co-type MPX [Formula: see text]-25 M isotope [Formula: see text]-emitter at a temperature of 300 K in vacuum ampoules at doses of [Formula: see text]–[Formula: see text] Gy. The electrical properties of the composites were studied before and after irradiation with [Formula: see text]-rays. Samples were prepared by mechanically mixing the filler [Formula: see text] powder with a low density polyethylene powder until obtaining a uniform mixture. The mixture is kept for 5 min at the melting temperature of the polymer under a pressure of 5 MPa. At the same temperature, by pressing a homogeneous mixture, the pressure rises to 15 MPa, at this pressure the sample is held for another 5 min, and then quickly cooled in water. The specific volume resistivity of the composites was measured using a DC bridge of the P-4053 type with additional measuring electrodes. Samples before testing are aged for 24 h at a temperature of [Formula: see text]C and a relative humidity of [Formula: see text]%. It was revealed that with an increase in the volume content [Formula: see text], the specific volume of resistivity of composites decreases. Under the action of [Formula: see text]-radiation and a change in the filler content, the magnitude and nature of [Formula: see text] dependence changes, and this allows to manage the physical parameters of studied composites by varying the filler content and [Formula: see text]-radiation dose.

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