Abstract
AbstractThe improvement in DC and RF characteristics of Quantum Well base in GaAs HBT (Hetero Junction Bipolar Transistor) is presented. Based on an experimentally validated model of the Silvaco TCAD tool, the properties of the GaAs HBT are simulated. Our results are indicative that Quantum Well base in HBT has the best DC characteristics like the current gain (760) and the lowest offset voltage (5.9 mV). However, the RF performance of the HBT is observed to be poor with the unity gain cut-off frequency recording a value of fT = 1 MHz.KeywordsQuantum wellQWBHBTLinearity
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