Abstract
The addition of Nb and Mg cation to T1O2 shows that promoter incorporation has a beneficial effect on H2 production in TiO2 dispersions under irradiation. Concentrations of 1% Nb, 7.5% Li and. 1-2% Mg have been shown to be optimal in promoting interfacial charge transfer. The point defect model is used as a basis for the discussion of the electronic character of the solids and as such provides an indicator of the reactivities as a function of the increasing concentration of added dopant. Dopants added to TiO2have been shown to affect the ratio Ti+4 Ti+3 and also the amount of 0−2 in the T1O2 lattice. In some cases the promoting ions introduce lattice defects of the Schottky type in the bulk TiO2. It was found that not all of the doping-ions incorporated into TiO2 promote catalytic activity. A few monolayers of the modified interface (e.g; TiO2-Ba+2) also effectively increase the surface efficiency when enhancing H2 production in TiO2 slurries under u.V. irradiation.
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