The effect of pressure on growth rate and quality of diamond films prepared by microwave plasma chemical vapor deposition

Abstract

摘要 研究了微波化学气相沉积中沉积气压对金刚石薄膜生长速率和质量的影响.研究表明，金刚石薄膜的生长速率随沉积气压的提高而增大，生长速率与沉积气压为线性关系.在高沉积气压下生长的金刚石薄膜晶形完整，拉曼谱测量可得到锐利的金刚石相的峰，但电压-电流测量表明，随着制备时沉积气压的提高，金刚石薄膜的暗电流增大，膜的电学质量下降. 关键词: 金刚石薄膜 / 生长速率 / 沉积气压 Abstract The effect of total pressure on growth rate and quality of diamond films prepared by microwave plasma chemical vapor deposition was investigated. The results show that when the total pressure changed from 1.03×104 to 1.68×104Pa the growth rate increased from 3 to 16μm/h. For the diamond films prepared at high deposition pressure, scanning electron microscope images show clearly the crystals and the Raman spectra have sharp peaks at 1332 cm-1, which shows good quality of diamond films. However, the voltage-current relation shows the electrical quality of diamond films decreased since the defect density of surface may increase at high deposition pressures. Keywords: diamond films / growth rate / deposition pressure 作者及机构信息 李晓红, 郭晚土, 陈学康, 吴 敢, 杨建平, 王 瑞, 曹生珠, 余 荣 基金项目: 西南科技大学博士研究基金(批准号：06ZX7113)资助的课题. Authors and contacts 参考文献 施引文献