Abstract
The relationship between In incorporation in InGaN/GaN quantum wells (QWs) and the plane orientation was investigated by using eight different GaN substrates, including non-polar, semi-polar and polar planes. Applying simultaneous metalorganic vapor-phase epitaxial (MOVPE) growth, a series of InGaN-based LEDs was fabricated on various planar GaN substrates and variations in In content in QWs, surface morphology and electroluminescence peak wavelength were examined. Samples made with the semi-polar (112¯2) plane and the polar (0001) plane had the high In contents, while specimens incorporating the non-polar (101¯0) plane had the low In content. The In content was most readily increased in the QWs produced using (112¯2), (0001), (101¯1) and (101¯0) planes, and the surface morphologies of samples made on the (0001), (112¯2), (202¯1) and (202¯1¯) planes were smoother than those of samples fabricated on the other planes.
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