Abstract
In this work we derived an expression for positron-piezoelectric phonon coupling relaxation time by using Green's function method in zincblende type semiconductors. We obtained the explicit expressions for positron-piezoelectric phonon interaction relaxation rate due to longitudinal and transverse phonons respectively. The effect of screening has also been included within the Thomas-Fermi approximation. This theory is applied to calculate the energy relaxation time and diffusion coefficient for GaAs. The numerical results show that both transverse and longitudinal piezoelectric phonons contribute almost the same to the diffusion coefficient. It is also found that the relaxation rate decreases with increasing screening length.
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