Abstract
The effect of the semiconductor structure of an oscillator diode on the phase stabilization of microwave oscillations in a nanosecond Gunn oscillator by using a modulating voltage pulse edge is investigated. Numerical simulation is employed to determine phase deviations depending on the scatter of pulseedge duration and pulse amplitude. The standard deviation of phase-delay time of microwave oscillations in the oscillator with regard to a constant level at the modulating pulse edge and the standard deviation of phase difference of microwave oscillations in two electrodynamically insulated oscillators connected in parallel to one and the same modulator have been measured.
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