Abstract

Energy injection effect and mechanism of silicon bipolar low noise amplifier (LNA) through the injection of a special signal are experimentally studied in this paper. The experimental results show that the passive resistor is also one of the weaknesses of silicon LNAs in addition to the active device. Based on the low noise design rule of LNA, a wider passive resistor design is particularly useful not only in reducing the noise but also in improving the reliability of LNA whenever possible. Except for the gain characteristics, the experimental results indicate that the noise figure of silicon bipolar LNA is also one of the sensitive parameters to energy injection.

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