Abstract
A silicon crystal was grown after the floating-zone (FZ) method under oxygen partial pressures (Po2 in) of 2.0×10-8 MPa and 5.8×10-6 MPa, which were measured at the entrance of a furnace. It was found that dopant striations showed a single-peak spectrum at 0.19 Hz in this crystal, and a crystal grown at Po2 in of 2.0×10-8 MPa showed multiple frequencies. This result is explained by a decrease in the Marangoni number with increasing oxygen partial pressure. It has thus been concluded that Marangoni flow in FZ silicon crystal growth can be controlled by introducing oxygen gas, independently of the temperature field control in the vicinity of the crystal/melt interface.
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