Abstract
ABSTRACTSi1−xGex layers containing 2×1020 oxygen atoms/cm3 exhibit an enhancement in thermal stability when compared to similar films (comparable Ge content and thickness) with 2 orders of magnitude less oxygen. X-ray measurements of the lattice constants in the strained films indicate that the oxygen does not substantially change the amount of strain in the layers. A prediction of the effect of oxygen based on solid solution strengthening theory is shown to be consistent with experimental annealing results. In addition, experimental measurements of slower misfit dislocation velocities in the layers with high oxygen content compared to those measured in films with low oxygen content, support the idea of solid solution strengthening. It is therefore likely that oxygen impedes the kinetics of dislocation formation.
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