Abstract
We studied the effect of oxygen on the growth quality of diamond epitaxial layers. After oxygen is added during the growth of the diamond epitaxial layer, as the thickness of the epitaxial layer increases, the full width at half maximum of the rocking curve of the (004) plane of diamond epitaxial layer increases continuously, and, in addition, the intensities of both the Raman peaks and the free exciton emission peaks of the diamond epitaxial layer decrease continuously. These experimental results demonstrate that as the thickness of the diamond epitaxial layer increases, the quality of the diamond epitaxial layer degrades. The strong etching effect of the OH radical groups in the plasma on the diamond epilayers leads to the degradation of their crystallinity.
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