Abstract
In a previous paper the enhancement of solvent and solute diffusion upon alloying was discussed at high temperatures in terms of the complex model of Dorn and Mitchell and its application to diffusion by Hehenkamp et al., regarding the solute atoms as being randomly distributed around vacancies and introducing an average binding free enthalpy for each complex. In this work the effect of configuration is taken into account additionally according to Bérces and Kovács and different binding free enthalpies are introduced in a given complex. Modified expressions are derived for the enhancement factors of solvent and solute diffusion, and the binding free enthalpies of the different complexes and configurations are given as functions of these quantities. An approximation is developed for the calculation of the binding free enthalpy of a vacancy-impurity pair solely from the linear and second order enhancement factors of solvent diffusion. The formalism, which is no longer restricted to high temperatures, is applied to enhancement measurements in Ag Sn and Ag Sb alloys in the high temperature range. The results are compared with the previous calculations. The deviations are found to be very small.
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