Abstract
Studies under both greenhouse and field conditions have been conducted to determine the effects of nitrogen, phosphorus, and potassium on lodging of oats. Resistance to lodging in oats is influenced to an important degree by the development of culm, coronal root system, and plant height. The effects of nitrogen, phosphorus, and potassium on the three characters were measured and combined into single lodging index value in order to determine the complete effect of treatment on lodging.Phosphorus improved lodging resistance to an important degree. Nitrogen increased lodging susceptibility, except when it was combined with phosphorus. Potassium, alone, improved lodging resistance but was not effective when applied with either phosphorus or nitrogen. The greatest resistance to lodging was provided by a combination of nitrogen, phosphorus, and potassium.
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