Abstract
110 keV nitrogen ions (N +) of fluences 1 × 10 14–1 × 10 17 cm −2 have been implanted in liquid encapsulated Czochralski grown Fe-doped semi-insulating indium phosphide (InP) single crystal substrates. Grazing incidence X-ray diffraction measurements on as-grown and implanted samples have been carried out and analyzed. At all above fluences, a broad hump in the region of InP(1 1 1) peaks is observed. It might have resulted from implantation-induced misoriented grains along certain preferred orientations. The peak observed at a d-value of 1.77 Å for all the fluences becomes more pronounced as the implantation fluence increases up to 1 × 10 16 cm −2. This could indicate formation of an Indium phosphide nitride alloy. Post-implantation annealing reduces the structural defects and assists in the growth of the nitride phase.
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