Abstract

This paper deals with the effect of nitrogen doping on the electrical, compositional and structural properties of r.f.-sputtered 50%Ni–50%Cr films prepared by mixing different quantities (maximum, 10 vol.%) of nitrogen into the sputtering gas. The investigations show that the nitrogen doping results in a hindered diffusion of chromium. For more than a certain quantity of nitrogen, nickel rather than chromium migrates to the surface and becomes oxidized there. As a result a poorly conducting chromium-enriched phase is formed in the internal layer.

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