Abstract

When about 1.5 × 10 16 nitrogen atoms cm −2 are deposited at the Pt-Si interface by sputter etching before platinum deposition, the growth of PtSi is strongly modified. This growth was observed after annealings at temperatures higher than 500°C. Our investigations, which involved the combined use of optical microscopy, scanning electron microscopy, Rutherford backscattering, nuclear reaction analysis, X-ray diffraction and topography, showed that the silicide does not grow as a homogeneous layer but in the form of PtSi islands surrounded by platinum. The PtSi islands are circular with a diameter that increases linearly with time. Kinetic studies indicated that the PtSi growth is not diffusion controlled; it is suggested that it is a nucleation-controlled process. A simple model for PtSi growth is proposed. The significant role of stresses is pointed out.

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