Abstract
InAs/GaAs quantum dots (QDs) under their exposure to a nitrogen plasma were investigated using photoluminescence (PL) and X-Ray Photoelectron Spectroscopy (XPS) techniques. The motivation of this work is to study the effect of nitrogen in InAs QDs, and their role in the amelioration of optical properties. At low temperature, nitrogen addition causes a red-shift of the PL emission. This can be explained by reduction of quantum confinement. Power-dependent analysis of PL exhibit that the transition is about band-to-band intrinsic recombination which may be due to the formation of a lnAsN thin layer at the interface of InAs QDs.XPS is used to determine the species created at the surface. To follow QDs nitridation, we focused our attention on the N1s and In3d XPS spectra.The temperature dependent PL measurements in the range 10–300 K for nitrided InAs QDs showed an S-shape in PL peak energy and contributed to an estimated value of exciton localization energy.In addition, by increasing the time nitridation in InAs QDs, the emission wavelength increases further. Our results displayed a significant improvement of the crystalline quality and enhancement of the optical properties for InAs QDs grown after nitridation.
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