The effect of native oxide layer on some electronic parameters of Au/n-Si/Au–Sb Schottky barrier diodes

Abstract

We have fabricated Au/n-Si Schottky barrier diodes (SBDs) with and without thin native oxide layer to explain whether or not the native oxide layer is effective on some electronic parameters such as ideality factor, barrier height (BH), series resistance, interface state density and rectifying ratio. The native oxide layer on Si surface cleaned using RCA cleaning procedure was obtained by exposing the Si surface to clean room air for 10h, before metal evaporation. We calculated electronic parameters of these two diodes and compared them. The values of 1.04 and 0.742eV for ideality factor and BH of the reference sample, respectively, and the values of 1.15 and 0.743eV for the ideality factor and BH of Au/native oxide/n-Si, respectively, were obtained. The values of all electronic parameters of Au/native oxide/n-Si metal–insulator–semiconductor (MIS) SBDs except for the rectifying ratio have been found to be higher than values of the reference sample (MS).