The effect of nanoscale steps on the self-catalyzed position-controlled InAs nanowire growth

Abstract

We find the nanoscale steps on Si (1 1 1) surface can influence the self-catalyzed position-controlled InAs nanowire growth by metal-organic chemical vapor deposition (MOCVD). The nanoscale steps, made of the photoresist residues induced by incomplete-development after electron beam lithography, show a strong effect on the size and density of InAs nanowire nucleation. The phenomena are explained by a proposed model that the nanoscale steps on Si (1 1 1) surface can block the diffusion of Indium atoms thus influencing the formation of Indium droplets. Our result is helpful for understanding the growing mechanism and growing InAs nanowires with precise position-control.