Abstract
The effect of N2 gas pressure during the rapid thermal process (RTP) on the structural and morphological properties of CIGS films was investigated. The precursor was prepared by sputtering from a single quaternary CIGS target. XRD characterization demonstrated that there were two phase of CuIn0.7 Ga0.3 Se2 and Ga-rich CuInSubscript text1-xGaxSeSubscript text2 chalcopyrite structure in all of the selenized CIGS films. Too low and too high N2 gas pressure induced compact but small grain-size morphologies due to the insufficient Se supply. Furthermore, all of the samples exhibited delaminated cross-sectional morphologies. Finally, Photovoltaic devices prepared from absorbers selenized under 4 Torr N2 gas pressure resulted in efficiency of 4.8%.
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