Abstract
The oxygen vacancies in the TiOx active layer play the key role in determining the electrical characteristics of TiOx–based memristors such as resistive-switching behaviour. In this paper, we investigated the effect of a multi-layer stacking sequence of TiOx active layers on the resistive-switching characteristics of memristor devices. In particular, the stacking sequence of the multi-layer TiOx sub-layers, which have different oxygen contents, was varied. The optimal stacking sequence condition was confirmed by measuring the current–voltage characteristics, and also the retention test confirmed that the characteristics were maintained for more than 10,000 s. Finally, the simulation using the Modified National Institute of Standards and Technology handwriting recognition data set revealed that the multi-layer TiOx memristors showed a learning accuracy of 89.18%, demonstrating the practical utilization of the multi-layer TiOx memristors in artificial intelligence systems.
Highlights
Oxide-based memristive devices have attracted considerable interest due to their advantages such as non-volatile memory function, fast switching speed, low power consumption, good durability, process compatibility with complementary metal-oxide semiconductor technology, as well as the possibility of being implemented in real hardware and board-integrated systems [1,2,3,4,5,6]
The memristor devices are constructed with a metal−insulator−metal (MIM) structure with an active layer sandwiched between the two counter electrodes
Based on the history of the applied bias, the memristors are switched between high-resistive state (HRS) and low-resistive state (LRS) by the modulation of the resistance of the active layer
Summary
Oxide-based memristive devices have attracted considerable interest due to their advantages such as non-volatile memory function, fast switching speed, low power consumption, good durability, process compatibility with complementary metal-oxide semiconductor technology, as well as the possibility of being implemented in real hardware and board-integrated systems [1,2,3,4,5,6]. The simple two-terminal crosspoint structure of memristors is expected to enable the high-density integration of computing devices by adopting three-dimensional stacking architectures [1,7]. Due to these advantages, various emerging electronics such as neuromorphic circuits and systems have been demonstrated by utilizing the memristors as one of their key elements [8,9]. Based on the history of the applied bias, the memristors are switched between high-resistive state (HRS) and low-resistive state (LRS) by the modulation of the resistance of the active layer. Many different material candidates have been investigated such as TiO2, HfO2, NbO2, TaOx, ZnO and
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
