Abstract
A multi-quantum barrier structure is employed as the electron blocking layer of light-emitting diodes to enhance their performance. Using the non-isothermal multi-physics-field coupling model, the internal quantum efficiency, internal heat source characteristics, spectrum characteristics, and photoelectric conversion efficiency of light-emitting diodes are analyzed systematically. The simulation results show that: introducing multi-quantum barrier electron blocking layer structure significantly increases the internal quantum efficiency and photoelectric conversion efficiency of light-emitting diodes and the intensity of spectrum, and strongly ensures the thermal and light output stability of light-emitting diodes. These results are attributed to the modified energy band diagrams of the electron blocking layer which are responsible for the decreased electron leakage and enhanced carrier concentration in the active region.
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