Abstract
A multi-quantum barrier structure is employed as the electron blocking layer of light-emitting diodes to enhance their performance. Using the non-isothermal multi-physics-field coupling model, the internal quantum efficiency, internal heat source characteristics, spectrum characteristics, and photoelectric conversion efficiency of light-emitting diodes are analyzed systematically. The simulation results show that: introducing multi-quantum barrier electron blocking layer structure significantly increases the internal quantum efficiency and photoelectric conversion efficiency of light-emitting diodes and the intensity of spectrum, and strongly ensures the thermal and light output stability of light-emitting diodes. These results are attributed to the modified energy band diagrams of the electron blocking layer which are responsible for the decreased electron leakage and enhanced carrier concentration in the active region.
Highlights
A multi-quantum barrier structure is employed as the electron blocking layer of light-emitting diodes to enhance their performance
The simulation results show that: introducing multi-quantum barrier electron blocking layer structure significantly increases the internal quantum efficiency and photoelectric conversion efficiency of light-emitting diodes and the intensity of spectrum, and strongly ensures the thermal and light output stability of light-emitting diodes. These results are attributed to the modified energy band diagrams of the electron blocking layer which are responsible for the decreased electron leakage and enhanced carrier concentration in the active region
In order to accurately predict chip performance under high operation current, our newly developed non-isothermal multi-physics-field coupling model will be used in this paper, the thermal-dependent spectrum characteristics, photoelectric conversion efficiency as well as internal quantum efficiency will be systematically studied by introducing a multi-quantum barrier (MQB) electron blocking layer (EBL)
Summary
A multi-quantum barrier structure is employed as the electron blocking layer of light-emitting diodes to enhance their performance. The effect of multi-quantum barrier structure on light-emitting diodes performance by a non-isothermal model Using the non-isothermal multi-physics-field coupling model, the internal quantum efficiency, internal heat source characteristics, spectrum characteristics, and photoelectric conversion efficiency of light-emitting diodes are analyzed systematically.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
