Abstract
In this paper, three structures (cylinder, square column, and hexagonal prism) of InGaAsP nanowire arrays are designed based on the excellent light trapping effect of nanostructures. The effects of nanowire aperture, array period, and nanowire height on the light absorption properties are simulated and analyzed using the finite-domain time-difference (FDTD) method. The photoelectron emission capacity of the nanowire arrays was also calculated using MATLAB. The results show that the cylindrical nanowire array has phenomenon of resonance enhancement (absorption peak) in the near-infrared band of 820–1000[Formula: see text]nm, and the shift of absorption peaks can be achieved by adjusting the geometric parameters. Meanwhile, the quantum efficiency is taken to 9.98%. These simulation results provide some reference for the photocathode design of InGaAsP in the near-infrared band.
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