Abstract

Atomically thin materials, like semiconducting transition metal dichalcogenides (S-TMDs), are highly sensitive to the environment. This opens up an opportunity to externally control their properties by changing their surroundings. Photoluminescence and reflectance contrast techniques are employed to investigate the effect of metallic substrates on optical properties of MoSe2 monolayer (ML). The optical spectra of MoSe2 MLs deposited on Pt, Au, Mo and Zr have distinctive metal-related lineshapes. In particular, a substantial variation in the intensity ratio and the energy separation between a negative trion and a neutral exciton is observed. It is shown that using metals as substrates affects the doping of S-TMD MLs. The explanation of the effect involves the Schottky barrier formation at the interface between the MoSe2 ML and the metallic substrates. The alignment of energy levels at the metal/semiconductor junction allows for the transfer of charge carriers between them. We argue that a proper selection of metallic substrates can be a way to inject appropriate types of carriers into the respective bands of S-TMDs.

Highlights

  • We study the effect of metallic substrate on optical properties of MoSe2 ML

  • This indicates that the electronic band gap (Eg) renormalization is almost completely compensated by the renormalization of the Eb resulting in a small variation of the optical band gap Egopt[36,37]

  • It has been found that the emission intensity ratio of the charged to neutral excitons as well as the trion binding energy decrease with increasing the work function of the substrate

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Summary

Introduction

We study the effect of metallic substrate on optical properties of MoSe2 ML. On top of which the MoSe2 flakes were transferred, were chosen based on their fundamental physical properties: electrical and thermal conductance, work functions, and chemical stability. Platinum (Pt) and gold (Au) are often used as high-work-function electrical contacts (the work functions of Pt and Au are equal to 5.64 eV18 and 5.1 eV19, respectively). When connected to monolayer MoSe2 they are expected to form p-type Schottky barriers. The opposite should be observed for zirconium (Zr), characterised by low work function (equal to 4.05 eV19) and supposed to result in n-type Schottky contacts. We consider molybdenum (Mo) that should form strong orbital overlaps with materials comprising the same element, in particular, MoSe2.

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