Abstract
The etch rate of silicon in plasmas is a strong function of the masking material coated on the wafer to define etch patterns. Samples coated with several different metals (silver, copper, chromium, and aluminum) all exhibit a higher silicon etch rate compared to samples coated with a photoresist mask. For silver‐masked samples, the silicon etch rate can be enhanced by as much as a factor of five relative to a photoresist mask. These results can be explained in terms of a catalytic reaction occurring on the mask surface which gives rise to a local enhancement of the fluorine radical concentration leading to an increased etch rate of silicon. The validity of this explanation was confirmed by actinometry.
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