Abstract
In this paper, the characteristics of domestic GaAs pHEMT device in cryogenic temperature region are measured and analyzed. From 250K to 77K, the DC performance is improved a lot, the saturation current increases by 20%, and the pinch-off voltage increases slightly. Besides, the RF performance is improved significantly. The gate resistance decreases to 40% as the temperature decreases, the characteristic frequency increases from about 32GHz to over 42GHz, and the highest oscillation frequency increases from about 100GHz to over 120GHz.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
