The effect of low-intensity radiation on the speed of CMOS microcircuits

Abstract

Aim. The degradation of CMOS microcircuits exposed to ionizing radiation was analysed. Three MOS defect formation processes at the Si-SiO2 boundary were examined. Methods. Using the example of test logic elements, the dependence of the time of conditional speed failure on the gamma dose rate was analysed. Findings. A critical defect at the Si-SiO2 boundary was identified. Conclusions. The approach proposed in the paper allows identifying the causes of CMOS microcircuit failures. Calculated failure times for three dose rates are presented.