The effect of long-range Coulomb potential on the electronic structure of localized states in homogeneous intrinsic amorphous semiconductors

Abstract

Abstract The magnitude of the spatial and energy scales in homogeneous intrinsic amorphous semiconductors resulting from the long-ranged Coulomb potential due to a random distribution of charged defects is calculated. It is shown that, for a reasonable concentration of charges, around 1018cm−3, in the absence of strong inhomogeneities, the magnitude of the long-range potential is small and does not affect significantly the electronic structure of the localized states. With strong inhomogeneities, the theoretical situation is not clear and more research is needed.