Abstract
The effect of substitutional Li doping into NiOx hole transporting layer (HTL) for use in inverted perovskite solar cells was systematically studied. Li doped NiOx thin films with preferential crystal growth along the (111) plane were deposited using a simple solution-based process. Mott-Schottky analysis showed that hole carrier concentration (NA ) is doubled by Li doping. Utilizing 4 % Li in NiOx improved the power conversion efficiency (PCE) of solar devices from 9.0 % to 12.6 %. Photoluminescence quenching investigations demonstrate better hole capturing properties of Li:NiOx compared to that of NiOx , leading to higher current densities by Li doping. The electrical conductivity of NiOx is improved by Li doping. Further improvements of the device were made by using an additional ZnO layer onto PCBM, to remove shunt paths, leading to a PCE of 14.2 % and a fill factor of 0.72.
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