The effect of laser fluences on the structural and optoelectronic properties of Zn(O,Se) films

Abstract

Zinc oxy-selenide (Zn(O,Se)) is a prospective semiconductor that could be applied as a buffer layer in optoelectronic devices as an alternative for toxic CdS layers. A complete investigation of the effect of changing laser fluences from 4 to 6 J cm−2 on the phase composition,optical and electrical properties of Zn(O,Se) films prepared by pulsed laser deposition in a high vacuum at 500°C is reported. Deposited Zn(O,Se) films were characterized using HR-SEM, XRD, UV–Vis, and Hall effect measurements. HR-SEM micrographs illustrated the deposition of uniform, adherent, and compact Zn(O,Se) films. XRD investigation confirmed the formation of a Zn(O,Se) phase at 500°C for all three laser fluences. In addition, the UV–Vis transmittance spectra indicated the relative transparency of the deposited films in the visible range, accompanied by a redshift in the absorption edges as the laser fluences increased. Electrical measurements showed a significant increase of the electron concentration and electrical conductivity in the obtained films as laser fluence increased to 6 J cm−2.