Abstract
Photo-responsive properties studied in perovskite manganese La2/3(Ca3/4Sr1/4)1/3MnO3 (LEMO) thin film with continued laser and modulated laser pulses are studied in this paper. The two valence alkaline earth elements make the Mn have two states: Mn3+(t32geg) and Mn4+(t32g). The Sr, Ca double-doped holes concentration is from 0.2 to 0.4 with maintained electric charge balance. The resistivity and temperature principle indicates that the material has CMR effect and transforms characteristics from metal to semiconductor and insulator. The results show that the phase transition from ferromagnetic metallic state to paramagnetic insulating state occurs at 341 K while the highest peak temperature is near to Tp. The maximizing photo-responsive resistivity change (ΔR/R0)max can reach 43.7%. Responsive signal intensity to the laser pulse has nonlinear relationships with the temperature and bias current. The photo-response resistivity changes with excited down-spin electrons and the exciting field. The optimum photo-responsive condition is T = 229 K, I = 24.7 mA. (ΔR/R0)max increases with temperature following exponential characteristic and there is a limited temperature for photo-response. The carrier electrons and small polarons have effects on thephoto-responsive characters.
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