Abstract
The effect of laser annealing (LA) within an ultrashort time on metal-alumina-nitride-oxide-silicon-type flash memory device is investigated. Conventional high-temperature annealing leads to the degrading quality of high-k blocking oxide due to the long annealing time. On the contrary, an optimized LA at an energy of 500 mJ/cm2 can effectively improve the blocking efficiency due to the reduction in leakage current density. Using the results of x-ray photoemission spectroscopy and high-resolution cross-sectional transmission electron microscopy, this improvement was attributed to the minimized decomposition of the Al2O3 layer and the interfacial layer growth between Al2O3 and Si3N4.
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