The effect of interface-induced structural properties of the pentacene accumulation layer on the threshold voltage: Pentacene monolayer transistors

Abstract

The effect of pentacene/gate dielectric interface-induced structural properties of a pentacene monolayer (ML) close to the SiO2 gate dielectric on the threshold voltage in the field effect transistor (FET) and van der Pauw was addressed using atomic force microscopy and near edge X-ray absorption fine structure spectroscopy (NEXAFS). Our study reveals that large negative threshold voltage found in FET and van der Pauw devices is not closely correlated to the molecular orientation and the grain size of pentacene molecules in direct contact with the SiO2 gate dielectric. In concluding our finding, NEXAFS results in the ultrathin pentacene film within the carrier accumulation thickness regime, characterized by Debye length, were correlated to the magnitude of the threshold voltage from field effect devices. Our work motivates finding and visualizing interface-induced structural properties that are directly correlated to the magnitude of the threshold voltage.