Abstract
The effect of interface bond configuration on the structural and optical properties of short-period ( approximately=50 AA) GaSb/InAs superlattices has been examined. Structures consisting of eight monolayers of GaSb and seven monolayers of InAs with either 'GaAs-like' or 'InSb-like' interface bonds were grown by MBE. Evidence for differences in the structural properties, vibrational properties and band structure of the two types of material was obtained using X-ray diffraction, Raman scattering, interband magneto-absorption and photoconductivity measurements.
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