Abstract
We report for the first time the successful integration of strontium-bismuth-tantalate (SBT) ferroelectric capacitors on an SOI substrate. We have verified that the unique processing requirements of SBT capacitors does not affect the properties of the surrounding fully depleted silicon on insulator (FD-SOI) transistors, and, conversely, we have verified that the SOI processing does not affect the quality of the SBT capacitors. Further, we present total ionization radiation test results on the base, Oki FD-SOI material. We present that processing of the SBT material has no effect on the radiation performance of the FD-SOI transistors.
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