Abstract
The optimization of dual dielectric layers by incorporating poly(vinyl alcohol) (PVA), poly(methyl methacrylate) (PMMA), polystyrene (PS) or poly(4-vinylphenol) (PVP) in combination with Al2O3 resulted in immensely improved OFET characteristics with N,N'-bis(cyclohexyl)naphthalene diimide (NDI-CY2) as the active material. The influence of the polymer dielectric layer on the growth morphology of NDI-CY2 and the structural characterization were investigated using atomic force microscopy (AFM) and thin film XRD analysis. The bottom-gate top-contact OFET devices fabricated on glass substrates with Al contact electrodes demonstrated excellent n-channel behavior in the presence of the Al2O3/PVA dual dielectric with the highest electron mobility (μe) value of 0.08 cm(2) V(-1) s(-1), threshold voltage (VTH) as low as 0.5 V and current on/off ratio (ION/IOFF) of 10(4) with an operating voltage of 5 V respectively under vacuum.
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