The Effect of InAsSb Buffer Layer on the Thermoelectric Properties of MOCVD-Grown InSb Thin Films

Abstract

We have studied the thermoelectric properties of InSb thin films. They were prepared by metalorganic chemical vapor deposition on sapphire substrate using InAsSb buffer layer. the thickness of InAsSb buffer layer was changed as 0.9nm, 2.6nm, 5.1nm, 10nm, and 15nm. Electrical properties, thermoelectric properties, and crystalline properties of InSb thin films with a InAsSb buffer were assessed using Hall measurement, Power factor and X-ray diffraction. Using InAsSb buffer of 5.1nm, the mobility of InSb was as high as 10240cm2/Vs and the Power factor of InSb was as high as 3.73×10-4W/mK2.