Abstract
The results of nonempirical quantum chemical calculations of CaF2, SrF2, and BaF2 crystals that were activated by In3+ and Ga3+ ions have been presented. The calculations were performed in the framework of density functional theory using the VASP software complex. The estimation of the width of the band gap of defect-free crystals have been carried out by different methods and the influence of impurity ions on the band gap width has been estimated as well as the possibility of getting rid of shallow traps by introducing an impurity of indium or gallium has been investigated.
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