Abstract
The direct tunneling current through ultra-thin gate dielectrics is modeled by calculating the transmission coefficient of an idealized potential barrier that is modified by the image force. A numerical solution to the Schrödinger equation shows that the barrier lowering induced by image-potential affects the tunneling current largely. An analytical expression for the current is obtained within the Wentel–Kramers–Brillouin approximation. The effects of image force on the direct tunneling current are found to increase with the applied voltage across oxide ( V ox) and to decrease with the oxide thickness ( T ox).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
