Abstract
Tunnel resistivity R (= V/J) as a function of voltage has been calculated for magnetic tunnel junction systems, such as ferromagnet-insulator-ferromagnet three-layer structures. Our early study [1] has been carried out for determining the barrier characteristics in the MTJs based on Ni80Fe20/Al2O3/Co systems, by fitting the experimental I-V characteristics to Simmons' and Brinkmann's models without image force. In this paper, the image force is taken into account for approaching closely to a real barrier potential. The effect of dielectric constant, and temperature on the tunnel characteristics has also been investigated.
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