Abstract
It was found that the hydrogenation of ion-doped gallium arsenide structures leads to an increase in the sink breakdown voltage of high-power microwave Schottky barrier field effect transistors based on such structures (from 7 up to 17 V) and in the power of related microwave integration circuits (by a factor of up to 2.4). Data characterizing the dependence of the increase in the transistor breakdown voltage and the device power on the hydrogenation regime are presented. Possible mechanisms explaining the effect of hydrogenation on the electrical properties of gallium arsenide and the parameters of semiconductor devices are considered.
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