Abstract
We have developed a model to account for the effects of MeV proton irradiation and annealing on the doping profile of crystalline n-type silicon, and how this alters the formation of porous silicon during subsequent electrochemical anodization. Based on this model, we have developed a machining process using MeV proton irradiation. The hydrogen-doping during irradiation in n-type silicon allows selective modification of the doping profile only at the ion end-of-range. This allows formation of buried, hollow channels in porous silicon without any influence of the defect profile introduced above this region, which limits this process in p-type silicon.
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