Abstract
Gallium oxide (β-Ga2O3) nanostructures (NSs) have been successfully obtained through a simple scalable synthesis via thermal evaporation of gallium (III) oxide powder in hydrogen-ambient chemical vapour deposition (HACVD) without the presence of carrier gas. β-Ga2O3 was deposited on Si substrate by evaporating the source material at 1000 C in a regulated hydrogen reducing atmosphere, for 120 min growth time. Hydrogen ambient was regulated by varying the flow to observed changes in the morphological, structural and optical properties of films. The samples were characterized using high resolution X-ray diffraction (HR-XRD), field-emission scanning electron microscope (FE-SEM) and UV-vis-NIR spectrophotometer. The density and quality of NSs was observed to increase with hydrogen gas supply. The rarely reported 1) dominant XRD peak of β-Ga2O3 was obtained in the event of eliminating the carrier gas which is part of the usual recipe for CVD technique. The average crystallite size and energy gap of the synthesized material was found to decrease with increased hydrogen flow rate from 176.5 to 39.8 nm and 5.47 to 4.83 eV, respectively.
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