Abstract
We investigated the effect of hydrogen annealing in the temperature range from 850 to 1200°C on oxygen precipitation and gate oxide integrity in Czochralski Si wafers. The bulk microdefect density of dynamic random access memory thermal simulation wafers showed a strong dependence on the ramp‐up rate conditions of hydrogen annealing. The gate oxide integrity improved after hydrogen annealing at temperatures above 1000°C. However, for better stability of the gate oxide integrity after the heat‐treatment, higher temperature annealing is necessary. We observed that the effect of hydrogen annealing was limited to the near surface, because the gate oxide integrity of hydrogen‐annealed wafers degraded to that for nonannealed wafers after repolishing.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
