Abstract

AbstractThe nucleation mechanism for directional solidification of multicrystalline silicon (mc‐Si) in silicon nitride (Si3N4) coated crucibles has been investigated. A combination of thermal and particle size analysis was used to show that the nucleation undercooling was inversely proportional to the particles size. The particle size was increased by keeping the silicon melted for increasing time periods and the growing particles were identified as β‐Si3N4. The results from the particle analysis were verified by topographical studies using scanning electron microscopy (SEM). These results indicate that β‐Si3N4 particles are the dominant nucleation substrates for mc‐Si in Si3N4 coated crucibles. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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