The effect of high pressure gaseous He, Ar and N 2 on the photoconductivity of deformed Ge

Abstract

In order to examine the effect of the penetration process of compressed gases on the electrical activity of dislocations, photoconductivity (PC) measurements were carried out on deformed and undeformed germanium samples at 200 K and at high pressures of helium, argon and nitrogen. The results show that dislocations allow the gases to diffuse into the crystal interior more easily. Argon atoms and nitrogen molecules penetrate into dislocations in germanium much less (if at all) than helium atoms. He atoms can be built into the dislocation core, thus changing the electrical activity of the dislocations and causing the reconstruction of some dislocation partials.