The effect of heat generation via interface recombination in CZTSSe kesterite thin film solar cells: A simulation study

Abstract

Heat generation via Interface recombination in CZTSSe/CdS kesterite thin film solar cells has been investigated using a simulation model by coupling the thermal, electrical, and optical modules. Three interface defects (CuSn, CuZn, SnZn) located at different energy levels were considered. The defect closer to the midgap (CuSn at 0.55 eV) generate the highest heat power and increasing the defect density from 1014 cm−3 to 1018 cm−3 raised the interface heat generation from 60 W/cm2 to 80 W/cm2. This is nearly half of heat generation rate for CuZn defect located near the valence band. Hsurf raised from 60 W/cm2 to 74 W/cm2 by increasing the surface recombination velocity (S). This detailed simulation analysis recognizes the significant role of interface recombination and its contribution to heat generation and thermal stability in solar cells and demonstrates the importance of interface quality and interface engineering strategies in such devices.