Abstract
ABSTRACTWe fabricated ferroelectric (Pb,La)(Zr,Ti)O3 (PLZT) capacitors with Sn:In2O3 (ITO) top electrodes using chemical solution deposition. Then, the effects of a thin conductive ITO buffer layer between the Pt bottom electrode and PLZT thin film were investigated in combination with top electrode (ITO/PLZT/ITO/Pt). The H2 degradation resistance of ITO/PLZT/ITO/Pt capacitors with a 3- and 28-nm-thick buffer layer was improved to 78 and 85%, respectively, from 60% without a buffer layer. The time-of-flight secondary ion mass spectrometry profiles indicated the intensity of H ion increased after 45 min forming gas (3% H2/balance N2) annealing.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
